Integrated circuit device and method of manufacturing the same
US12356697B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2021 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Jan 26, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An integrated circuit device includes a fin-type active area extending in a first horizontal direction on a substrate, a channel area on the fin-type active area, a gate line surrounding the channel area on the fin-type active area and extending in a second horizontal direction crossing the first horizontal direction, an insulating spacer structure covering gate sidewalls of the gate line and channel sidewalls of the channel area, wherein the insulating spacer structure includes an air spacer having a first portion facing the gate sidewalls in the first horizontal direction and a second portion facing the channel sidewalls in the second horizontal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.