Inventor · Yongin-si, KR

Jong Shik Yoon

14Patents
6h-index
28Co-inventors
62Inventor score

Filing activity: Jul 27, 2004 → Sep 3, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US8952452B2 Semiconductor devices and method of manufacturing the same Electricity 13 Active
US7098099B1 Semiconductor device having optimized shallow junction geometries and method for fabrication thereof Electricity 12 Expired
US9922979B2 Integrated circuit device and method of manufacturing the same Electricity 11 Active
US7045436B2 Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI) Electricity 9 Expired
US9209177B2 Semiconductor devices including gates and dummy gates of different materials Electricity 9 Active
US7018888B2 Method for manufacturing improved sidewall structures for use in semiconductor devices Electricity 9 Expired
US7229869B2 Method for manufacturing a semiconductor device using a sidewall spacer etchback Electricity 6 Expired
US7514331B2 Method of manufacturing gate sidewalls that avoids recessing Electricity 3 Active
US9412693B2 Semiconductor device having jumper pattern and blocking pattern Electricity 3 Active
US7795085B2 Intentional pocket shadowing to compensate for the effects of cross-diffusion in SRAMs Electricity 2 Active
US9425148B2 Semiconductor devices having contacts with intervening spacers and method for fabricating the same Electricity 0 Active
US9754789B2 Method of fabricating semiconductor device and computing system for implementing the method Electricity 0 Active
US12356697B2 Integrated circuit device and method of manufacturing the same Electricity 0 Active
US7811893B2 Shallow trench isolation stress adjuster for MOS transistor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.