Electrical contact cavity structure and methods of forming the same
US12356705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2024 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Sep 17, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/832
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and/or a p-type MOS (p-MOS) region, the cavity shaping process comprising forming an n-MOS cavity in an exposed surface of the n-MOS region and/or a p-MOS cavity in an exposed surface of the p-MOS region, wherein the cavity shaping process is configured to increase the surface area of the exposed surface of the n-MOS region or the p-MOS region. In some embodiments, the method includes performing a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.