In situ and tunable deposition of a film
US12359307B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 23, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jan 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.