Wafer with regions of low oxygen concentration
US12359343B2 · kind B2 · utility
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33References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 9, 2020 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | May 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/122
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single crystal silicon wafer has a thickness between a first surface and an opposite second surface from 50 μm to 300 μm. The wafer includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to an adjacent region of the wafer. The wafer has a bulk minority carrier lifetime greater than 100 μs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.