Patent · US Active

Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projection

US12360135B2 · kind B2 · utility

0Cited by
31References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 23, 2022
Grant dateJul 15, 2025
Priority date
Expiry dateJan 31, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D1/714
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method for detecting orientation of an integrated circuit is disclosed. The method includes moving, in response to a gravitational force, a mobile metallic piece in an evolution zone of a housing. The housing is formed in an interconnect region of the integrated circuit. The housing includes walls defining the evolution zone. The walls are formed within multiple metallization levels of the interconnect region. The walls include a floor wall and a ceiling wall. At least one of the floor wall and ceiling wall incorporate a pointed element directing its pointed region towards the mobile metallic piece. The pointed element delimits an open crater in a concave part of a projection. The method further includes creating an electrical signal by movement of the mobile metallic piece at a plurality of electrically conducting elements positioned at boundary points of the evolution zone and detecting the electrical signal by a detector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.