Photonic semiconductor-on-insulator (SOI) substrate and method for forming the photonic SOI substrate
US12360314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2023 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jan 27, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12197
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor-on-insulator (SOI) structure and a method for forming the SOI structure. The method includes forming a first dielectric layer on a first semiconductor layer. A second semiconductor layer is formed over an etch stop layer. A cleaning solution is provided to a first surface of the first dielectric layer. The first dielectric layer is bonded under the second semiconductor layer in an environment having a substantially low pressure. An index guiding layer may be formed over the second semiconductor layer. A third semiconductor layer is formed over the second semiconductor layer. A distance between a top of the third semiconductor layer and a bottom of the second semiconductor layer varies between a maximum distance and a minimum distance. A planarization process is performed on the third semiconductor layer to reduce the maximum distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.