Method of manufacturing semiconductor device
US12360451B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 16, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Oct 8, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.