System and method for spin orbit torque based memory device
US12361996B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2023 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jan 23, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system and method for a memory device is disclosed. A substrate is provided. A first ferromagnetic layer is disposed over the substrate. A spacer layer is disposed over the first ferromagnetic layer. A second ferromagnetic layer is disposed over the spacer layer and magnetized in a first direction. A first charge current pulse is passed through the substrate, along a direction perpendicular to the first direction and orients the magnetization of the first ferromagnetic layer in a second direction perpendicular to the first direction. A second charge current pulse is passed through the substrate to selectively switch the magnetization of the first ferromagnetic layer either in the first direction or a direction opposite to the first direction based on a direction of the second charge current. The direction of switched orientation of the magnetization of the first ferromagnetic layer indicates a first value or a second value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.