Plasma etching apparatus and method
US12362152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2021 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Dec 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching apparatus for etching a semiconductor substrate comprises: a plasma chamber; a plasma generation device for sustaining a plasma within the plasma chamber; a substrate support disposed within the plasma chamber for supporting the semiconductor substrate, the substrate support comprising an electrically conductive structure; a power supply for providing an RF electrical signal having an RF power to the electrically conductive structure; and an annular dielectric ring structure comprising a backside surface, the backside surface comprising an electrically conductive coating; wherein the electrically conductive structure is spaced apart from and extends under the electrically conductive coating so that when RF power is provided to the electrically conductive structure the RF power couples to the electrically conductive coating. Associated methods are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.