Methods and apparatus for low temperature silicon nitride films
US12362169B2 · kind B2 · utility
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2References
16Claims
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Key dates
| Filing date | May 10, 2021 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Apr 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68771
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.