Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on an SiC carrier substrate
US12362173B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 26, 2020 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | May 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a composite structure comprises: a) providing an initial substrate made of monocrystalline silicon carbide, b) epitaxially growing a monocrystalline silicon carbide donor layer on the initial substrate to form a donor substrate, c) implanting ions into the donor layer to form a buried brittle plane defining the donor layer, d) depositing, using liquid injection-chemical vapor deposition at a temperature below 1000° C., a carrier layer on the donor layer, the carrier layer comprising an at least partially amorphous SiC matrix, e) separating the donor substrate along the brittle plane to form an intermediate composite structure comprising the donor layer on the carrier layer f) heat treating the intermediate composite structure at a temperature of between 1000° C. and 1800° C. to crystallize the carrier layer and form the polycrystalline carrier substrate, and g) applying mechanical and/or chemical treatment(s) of the composite structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.