Patent · US Active

Fill-in planarization system and method

US12362237B1 · kind B1 · utility

0Cited by
25References
20Claims
0Family size

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Key dates

Filing dateApr 5, 2024
Grant dateJul 15, 2025
Priority date
Expiry dateApr 5, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/304
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Systems and methods for laser-based surface processing operations on a wide bandgap semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes providing a semiconductor workpiece having a surface, the semiconductor workpiece including silicon carbide. The method includes providing a filler material on at least a portion of the surface. The method includes, subsequent to providing the filler material, performing a surface processing operation on the surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.