Patent · US Active

Semiconductor structure and method for forming a semiconductor structure

US12362241B2 · kind B2 · utility

0Cited by

0References

24Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Richard Geiger · Munich, DE
Klaus Herold · Poughquag, US
Harald Gossner · Riemerling, DE
Martin Ostermayr · Straubing, DE
Georgios Panagopoulos · Munich, DE
Johannes Xaver Rauh · Kirchseeon, DE
Joachim Singer · Neubiberg, DE
Thomas Wagner · Regelsbach, DE

Key dates

Filing date	Dec 17, 2021
Grant date	Jul 15, 2025
Priority date	—
Expiry date	Nov 15, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/481
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor structure is provided. The semiconductor structure includes a plurality of transistors arranged at a front side of a semiconductor substrate and a test structure located at the front side of the semiconductor substrate. Further, the semiconductor structure comprises a first electrically conductive connection extending from the test structure through the semiconductor substrate to a backside test pad arranged at a backside of the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.