Surface damage control in diodes
US12363928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2024 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Mar 27, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/27
Abstract
A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.