Conductive contact for ion through-substrate via
US12364048B2 · kind B2 · utility
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2References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Feb 1, 2024 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Feb 1, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/08145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present disclosure are directed towards an integrated chip including a first substrate having a front-side and a back-side opposite the front-side. A first doped region is in the first substrate and extends continuously from the front-side to the back-side. A conductive contact is over the first doped region. A conductive layer is between the first doped region and the conductive contact. The first doped region abuts a lower surface and sides of the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.