Semiconductor device
US12364067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jan 25, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.