Silicon carbide semiconductor device with a main cell outputting main current and a sense cell outputting sense current wherein the inclination of temperature dependent properties of the main current is approximately flat in a temperature of 0 *C or less
US12369350B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 5, 2022 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Dec 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
An object of the present disclosure is to achieve a stable current sensing operation and suppress decrease in main current at a low temperature of 0° C. or less in a silicon carbide semiconductor device. An SiC-MOSFET includes: a main cell outputting main current; and a sense cell outputting sense current proportional to the main current, wherein temperature dependent properties of the main current differ in accordance with threshold voltage of the main cell, temperature dependent properties of the sense current differ in accordance with threshold voltage of the sense cell, the threshold voltage of the main cell is smaller than the threshold voltage of the sense cell, and in a temperature of 0° C. or less, an inclination of the temperature dependent properties of the main current is smaller than an inclination of the temperature dependent properties of the sense current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.