Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
US12371788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2021 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Nov 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67346
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
According to one aspect of the present disclosure, there is provided a technique including: (a) stacking and accommodating substrates in a process chamber; (b) supplying a source gas to the plurality of substrates through a first nozzle provided in the process chamber along a stacking direction of the plurality of substrates and a second nozzle provided in the process chamber along the stacking direction of the plurality of substrates, wherein an amount of the source gas supplied through an upper portion of the first nozzle is greater than that of the source gas supplied through a lower portion of the first nozzle, and an amount of the source gas supplied through the lower portion of the second nozzle is greater than that of the source gas supplied through the upper portion of the second nozzle; and (c) supplying a reactive gas to the substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.