Semiconductor device with silicide structures surrounding epitaxial structures and method of making the same
US12376321B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 18, 2022 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Sep 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a channel region, a gate structure, two epitaxial structures, and two silicide structures. The channel region is disposed on the semiconductor substrate. The gate structure is disposed on the semiconductor substrate and over the channel region. The epitaxial structures are connected at opposite ends of the channel region and are disposed opposite to each other relative to the gate structure. The silicide structures respectively surround the epitaxial structures. A method of manufacturing a semiconductor device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.