Semiconductor device structure and method for forming the same
US12376339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2022 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Mar 17, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming a semiconductor device structure is provided. The semiconductor device structure includes a first fin structure formed over a substrate, and the first fin structure includes a plurality of first nanostructures stacked in a vertical direction. The semiconductor device structure further includes a second fin structure formed over the substrate, and the second fin structure includes a plurality of second nanostructures stacked in a vertical direction. The semiconductor device structure further includes a dummy fin structure between the first fin structure and the second fin structure. The dummy fin structure includes a first etching stop layer between a bottom portion and a top portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.