Low resistance photoconductive semiconductor switch (PCSS)

US12376388B2 · kind B2 · utility

Assignee

• The Government of the United States of America, as represented by the Secretary of the Navy · US

Inventors

• Andrew D. Koehler · Alexandria, US
• Travis J. Anderson · Alexandria, US
• Geoffrey M. Foster · Woodbridge, US
• Karl D. Hobart · Alexandria, US
• Francis J. Kub · Arnold, US
• Michael A. Mastro · Fairfax, US

Key dates

• Filing date: Sep 8, 2023
• Grant date: Jul 29, 2025
• Expiry date: Mar 19, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/1246
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A light controlled semiconductor switch (LCSS), method of making, and method of using are provided. In embodiments, a vertical LCSS includes: a semiconductor body including a photoactive layer of gallium nitride (GaN) doped with carbon; a first electrode in contact with a first surface of the semiconductor body, the first electrode defining an area through which light energy from at least one light source can impinge on the first surface; and a second electrode in contact with a second surface of the semiconductor body opposed to the first surface, wherein the vertical LCSS is configured to switch from a non-conductive off-state to a conductive on-state when the light energy impinging on the semiconductor body is sufficient to raise electrons within the photoactive layer into a conduction band of the photoactive layer.