Method for growing long-seed DKDP crystal by two-dimensional motion
US12378690B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 23, 2023 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Nov 28, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/16
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing long-seed DKDP crystal by two-dimensional motion grows the crystal along the cylindrical surface, and there is no cylinder-cone interface with low optical quality, while avoiding three flow regions which are inevitable in the crystal growth process by rotating crystal method, including incident flow, side flow and wake flow, and easily cause inclusion formation. The long seed crystal moves periodically in the fresh solution, four cylindrical surfaces can achieve reversible shear flow in one cycle, and any point on the cylindrical surface experiences the same hydrodynamic conditions in one movement cycle, so that the solute supply is sufficient and uniform, the growth velocity is improved, and the stability of morphology is ensured. The method facilitates rapid growth of high quality DKDP crystals and provides a better solution for the large-size, high-quality DKDP crystal growth required by the ICF laser device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.