Semiconductor wafer made of single-crystal silicon and process for the production thereof

US12378692B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Andreas Sattler · Trostberg, DE
• Juergen Vetterhoeffer · Burghausen, DE

Key dates

• Filing date: May 28, 2021
• Grant date: Aug 5, 2025
• Expiry date: Oct 30, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02658
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A semiconductor wafer of single-crystal silicon has an oxygen concentration per new ASTM of not less than 5.0×1017 atoms/cm3 and not more than 6.5×1017 atoms/cm3; a nitrogen concentration per new ASTM of not less than 1.0×1013 atoms/cm3 and not more than 1.0×1014 atoms/cm3;