Method for precision oxidation control by ion implantation
US12381088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2022 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Mar 6, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a semiconductor substrate, including performing a first ion implantation process on the substrate, wherein a first ion beam formed of an ionized first dopant species is directed at a top surface of the substrate and is blocked from a first portion of the substrate while being allowed to implant a second portion of the substrate, and performing a second ion implantation process on the substrate, wherein a second ion beam formed of an ionized second dopant species is directed at the top surface of the substrate and is blocked from the first portion of the substrate while being allowed to implant the second portion of the substrate, wherein an effect of the second ion implantation process on an oxidation rate of the second portion counteracts an effect of the first ion implantation process on the oxidation rate of the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.