Thin film structure and semiconductor device comprising the same
US12382670B2 · kind B2 · utility
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14References
20Claims
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Key dates
| Filing date | Aug 27, 2021 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Apr 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/033
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film structure includes a substrate; and a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which <112> crystal orientation is aligned in a normal direction of the substrate. The material layer may have ferroelectricity. The material layer may include the crystals of which the <112> crystal orientation is aligned in the normal direction of the substrate among all crystals of the material layer in a dominant ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.