Device having multiple emitter layers

US12382684B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Mattias E. Dahlstrom · Mill Valley, US
• Thomas James Moutinho · Gorham, US
• Craig Printy · Hollis, US
• Wibo D. Van Noort · Wappingers Falls, US
• Tatsuya Tominari · Tsukuba, JP

Key dates

• Filing date: Sep 20, 2021
• Grant date: Aug 5, 2025
• Expiry date: Sep 20, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

A semiconductor device include a first semiconductor layer with a first doping concentration. A second semiconductor layer has a second doping concentration and has a first surface and a second opposing surface. The second doping concentration is higher than the first doping concentration. The first surface of the second semiconductor layer is in contact with the first semiconductor layer. A contact is on the second surface of the second semiconductor layer. The contact includes a metal and a semiconductor.