Craig Printy
9Patents
2h-index
9Co-inventors
40Inventor score
Filing activity: Mar 29, 2004 → Sep 20, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7781295B1 | System and method for providing a single deposition emitter/base in a bipolar junction transistor | Electricity | 4 | Active |
| US7485538B1 | High performance SiGe HBT with arsenic atomic layer doping | Electricity | 3 | Active |
| US7892915B1 | High performance SiGe:C HBT with phosphorous atomic layer doping | Electricity | 2 | Active |
| US7829429B1 | Semiconductor device having localized insulated block in bulk substrate and related method | Electricity | 1 | Active |
| US7508531B1 | System and method for measuring germanium concentration for manufacturing control of BiCMOS films | Physics | 1 | Active |
| US7319530B1 | System and method for measuring germanium concentration for manufacturing control of BiCMOS films | Physics | 1 | Expired |
| US8007675B1 | System and method for controlling an etch process for a single crystal having a buried layer | Electricity | 1 | Active |
| US12382684B2 | Device having multiple emitter layers | Electricity | 0 | Active |
| US8115196B2 | High performance SiGe:C HBT with phosphorous atomic layer doping | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.