Semiconductor phosphide injection synthesis system and control method
US12383879B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2021 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Feb 3, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner. The phosphorus source carrier includes a phosphorus source carrier main body, a phosphorus source carrier upper cover, a heating element base arranged at an inner bottom of the phosphorus source carrier main body, and a heating element arranged on the heating element base; a heat insulation layer is wrapped on an outer wall of the phosphorus source carrier; and an induction coil is arranged between the heat insulation layer and an inner wall of the shielding carrier box. By improving a device and method, the system stability can be improved, and an entire synthesis system achieves quantitative synthesis, which lowers the risk of explosion …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.