Resist underlayer film-forming composition using carbon-oxygen double bond
US12386262B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2019 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Feb 9, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G2261/3241
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist lower layer film formation composition that exhibits a high etching resistance and a good dry-etching rate ratio and optical constant, exhibits good coating performance even on a so-called stepped substrate, produces a small film thickness difference after embedding, and enables a flat film to be formed. Also a method for manufacturing a polymer suitable for the resist lower layer film formation composition, a resist lower layer film in which the formation composition is used, and a method for manufacturing a semiconductor device. A resist lower layer film formation composition containing: a solvent; and a reaction product between an aromatic compound having 6-60 carbon atoms and a carbon-oxygen double bond of an oxygen-containing compound having 3-60 carbon atoms. The oxygen-containing compound has, in one molecule, one partial structure: —CON< or —COO—. In the reaction product, one carbon atom of the oxygen-containing compound links two of the aromatic compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.