Opportunistic storage of non-write-boosted data in write booster cache memory
US12386543B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2023 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Jan 4, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F3/0679
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In some implementations, a memory device may receive a write command that includes data to be written to the memory device. The memory device may receive an indication that single-level cell data caching is deactivated for the data. The memory device may determine whether the data is associated with a first data type or a second data type. The memory device may selectively write the data to single-level cell cache memory or multi-level cell main memory based on a determination of whether the data is associated with the first data type or the second data type and a determination of whether the single-level cell cache memory has available memory that is not reserved for the single-level cell data caching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.