Tungsten feature fill with nucleation inhibition
US12387979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2022 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Jul 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process parameters including exposure time, substrate temperature, and chamber pressure can be used to tune the inhibition profile. Also provided are methods of filling multiple adjacent lines with reduced or no line bending. The methods involve selectively inhibiting the tungsten nucleation to reduce sidewall growth during feature fill.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.