One-time programmable memory cell
US12389593B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2023 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | May 9, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A one-time programmable (OTP) memory cell includes a substrate having an active area surrounded by an isolation region. A divot is disposed between the active area and the isolation region. A transistor is disposed on the active area. A diffusion-contact fuse is electrically coupled to the transistor. The diffusion-contact fuse includes a diffusion region in the active area, a silicide layer on the diffusion region, and a contact partially landed on the silicide layer and partially landed on the isolation region. A sidewall surface of the diffusion region in the divot is covered by the silicide layer. The divot is filled with the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.