Three-dimensional memory device and method for forming the same

US12389603B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Liang Chen · 红钢城街道, CN
• Shiqi Huang · Beijing, CN
• Wei Liu · 红钢城街道, CN
• Yanhong Wang · Beijing, CN

Key dates

• Filing date: Jun 22, 2022
• Grant date: Aug 12, 2025
• Expiry date: Apr 5, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/27

Abstract

A three-dimensional (3D) memory device includes a plurality of memory stacks arranged along a first direction, and a dummy block structure disposed between two adjacent memory stacks. Each memory stack includes a plurality of first conductive layers and a plurality of first dielectric layers alternately stacked along a second direction perpendicular to the first direction. A channel structure extends through the plurality of first conductive layers and the plurality of first dielectric layers along the second direction. A first isolation structure is disposed between the dummy block structure and one of the plurality of memory stacks. A substrate is disposed under the plurality of memory stacks, the dummy block structure, and the first isolation structure. A second isolation structure is disposed in the substrate extending along the second direction.