Exposure light beam phase measurement method in laser interference photolithography, and photolithography system
US12393127B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 23, 2020 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Oct 6, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/7055
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An exposure light beam phase measurement method for laser interference photolithography comprises: separating a measurement light from an exposure light beam and inputting light into a laser phase measurement interferometer to carry out phase measurement on the exposure light beam; inputting a reference light beam homologous with the exposure light beam into the laser phase measurement interferometer; processing the reference light beam to form an interference measurement optical signal; calculating to obtain the phase of the exposure light beam. A laser interference photolithography system using the method comprises a laser phase measurement interferometer, a controller and phase modulators, the laser phase measurement interferometer measures whether the phase of an exposure light beam drifts, the controller controls phase modulators to carry out phase modulation, to achieve locking of exposure stripe phase drift and manufacturing of a high-precision variable-period optical grating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.