Antifuse-type non-volatile memory and control method thereof
US12394499B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2023 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Apr 29, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An antifuse-type non-volatile memory and a control method for the antifuse-type non-volatile memory are provided. During a program action of a program cycle, a timing controller generates a timing control signal. According to the timing control signal, a word line driver is controlled to provide an on voltage and an off voltage to an activated word line. In a total time period of plural on periods, the program current is sufficient to rupture a gate oxide layer of an antifuse transistor in the selected memory cell, and a heating process is completed. Consequently, the gate oxide layer of the antifuse transistor is in a solid rupture state. Consequently, the program action can be successfully performed on the selected memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.