Semiconductor device and method for fabricating the same
US12396178B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 19, 2022 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Aug 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
A semiconductor device may include: a plurality of first conductive lines; a plurality of second conductive lines disposed over the first conductive lines to be spaced apart from the first conductive line, a variable resistance layer disposed above the first conductive line and below the second conductive line; at least one of a first interlayer dielectric layer or a second interlayer dielectric layer; at least one of a first contact or a second contact, wherein the first selector layer is disposed in a portion of the first interlayer dielectric layer below the first contact and the second selector layer is disposed in a portion of the second dielectric layer below the second contact, wherein the first selector layer includes a dielectric material of the first interlayer dielectric layer and a dopant, and the second selector layer includes a dielectric material of the second interlayer dielectric layer and a dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.