Light-emitting diode and manufacturing method thereof

US12396299B2 · kind B2 · utility

Assignee

• Tyntek Corporation · TW

Inventors

• Yuan FU · Banluliao, TW
• Yi-Hung Chen · Taipei, TW
• Tai-Hsiang Hu · Banluliao, TW

Key dates

• Filing date: Jan 19, 2023
• Grant date: Aug 19, 2025
• Expiry date: Mar 21, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/831

Abstract

A light-emitting diode (LED) and a manufacturing method thereof are disclosed. The LED includes: a substrate, a light-tight reflective layer, an inner epitaxial layer, an outer epitaxial layer, a non-conducting layer, an ohmic metallic body, a first electrode, and a second electrode. The inner epitaxial layer and the outer epitaxial layer are separated from each other by a separation space. In a view made from a top side of the LED, the separation space forms a closed path and surrounds the light exit hole. The separation space provides an effect of blocking an electrical current and a light emission area in the inner epitaxial layer. By redirecting light emitting from a lateral side of the inner epitaxial layer toward a top side of the LED, the LED shows a low side light ratio.