Semiconductor devices
US12396379B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2022 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Dec 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A semiconductor device includes gate electrodes on a substrate, a channel and a resistance pattern. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The channel extends through the gate electrodes in the vertical direction on the substrate. The resistance pattern includes a phase-changeable material. The resistance pattern includes a first vertical extension portion on a sidewall of the channel and extending in the vertical direction, a first protrusion portion on an inner sidewall of the first vertical extension portion and protruding in a horizontal direction substantially parallel to the upper surface of the substrate, and a second protrusion portion on an outer sidewall of the first vertical extension portion and protruding in the horizontal direction and not overlapping the first protrusion portion in the horizontal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.