Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound
US12398166B2 · kind B2 · utility
0Cited by
7References
14Claims
0Family size
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Key dates
| Filing date | Apr 25, 2023 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Apr 25, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F15/065
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.