Fixed-position defect doping method for micro-nanostructure, and NV center sensor

US12398454B2 · kind B2 · utility

Assignee

• UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA · CN

Inventors

• Mengqi Wang · Beijing, CN
• Ya Ping Wang · Shanghai, CN
• Haoyu Sun · Dongying, CN
• Xiangyu Ye · Hefei, CN
• Pei Yu · Hefei, CN
• Hangyu Liu · Nanhu, CN
• Pengfei Wang · Shanghai, CN
• Fazhan Shi · Daguantang, CN
• Jiangfeng Du · Meekrap-oord, CN

Key dates

• Filing date: Nov 30, 2020
• Grant date: Aug 26, 2025
• Expiry date: Aug 20, 2041

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C14/042
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The present disclosure provides a fixed-position defect doping method for a micro-nanostructure based on a self-alignment process, including: S1, sequentially forming a sacrificial layer and a photoresist layer on a surface of a crystal substrate; S2, performing a lithography on the photoresist layer to form a mask hole according to a micro-nano pattern; S3, performing an isotropic etching on the sacrificial layer through the mask hole, and amplifying the micro-nano pattern to the sacrificial layer; S4, performing an ion implantation doping on an exposed crystal surface below the mask hole; S5, removing the photoresist layer, and depositing a mask material; S6, removing the sacrificial layer, and transferring a micro-nano amplified pattern in the sacrificial layer to a mask material pattern; and S7, etching an exposed crystal surface, and removing the mask material on the surface and forming a specific defect by annealing.