Method and system for vertical gradient freeze 8 inch gallium arsenide substrates
US12398486B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Sep 8, 2023 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Sep 8, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/42
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and wafers for vertical gradient freeze 8 inch gallium arsenide (GaAs) substrates. In disclosed examples, vertical gradient freeze systems for forming gallium arsenide (GaAs) substrates having silicon as a dopant, the system includes a crucible to contain a GaAs liquid melt and seed material during a formation process; one or more heating coils arranged in a plurality of heating zones; and a pedestal to move relative to the crucible, the system operable to control heating of the plurality of heating zones and movement of the pedestal to form a single crystal GaAs substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.