Patent · US Active

Photoacoustic sensors and MEMS devices

US12399153B2 · kind B2 · utility

0Cited by

7References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Rainer Markus Schaller · Kelheim, DE
Jochen Dangelmaier · Beratzhausen, DE
Matthias Eberl · Schweinhub, DE
Simon Gassner · Munich, DE
Franz Jost · Stuttgart, DE
Stefan Kolb · Unterschleißheim, DE
Horst Theuss · Wenzenbach, DE

Key dates

Filing date	Dec 21, 2022
Grant date	Aug 26, 2025
Priority date	—
Expiry date	Dec 25, 2043

Classification

Technology area (CPC G)Physics
CPC primaryG01N21/1702
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.