Method for verification of conductivity type of silicon wafer

US12400917B2 · kind B2 · utility

Assignees

• Zing Semiconductor Corporation · CN
• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Xing Wei · Xi'an, CN
• Minghao LI · Hefei, CN
• Zhongying Xue · Shanghai, CN

Key dates

• Filing date: Nov 30, 2021
• Grant date: Aug 26, 2025
• Expiry date: Jan 4, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N33/0095
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The present application provides a method for verification of conductivity type of a silicon wafer. The method comprises measuring the resistivity of the silicon wafer to obtain a first resistivity, placing the silicon wafer under atmosphere of air for a predicted time period, measuring the resistivity of the silicon wafer to obtain a second resistivity, and determining conductivity type of the silicon wafer by comparing the first resistivity and the second resistivity. The method can be applied to a silicon wafer having a high resistivity such as higher than 500 ohm−cm to rapidly and accurately determine conductivity type of the silicon wafer. Advantages of the method of the present application include accurate test results, easy operation, simple device requirement, and reduced cost.