High-mobility-electron transistors having heat dissipating structures
US12400927B2 · kind B2 · utility
0Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2022 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Dec 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/47
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor layer, a device layer, and heat dissipating structures. The semiconductor layer is over the substrate and the device layer is over the semiconductor layer. The device layer includes a first ohmic contact and a second ohmic contact. The heat dissipating structures are at least through the substrate and the semiconductor layer, and between the first ohmic contact and the second ohmic contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.