Method for manufacturing semiconductor device
US12400981B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2023 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Jun 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B80/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device, a first structure is formed on a first substrate. A first bonded body is formed by bonding a supporting substrate lower in rigidity than the first substrate to a first principal surface, on which the first structure is formed, of the first substrate. The first substrate is removed from the first bonded body. A second structure is formed on a second substrate. A third structure is formed on a third substrate. A second bonded body is formed by bonding a second principal surface, on which the second structure is formed, of the second substrate to a third principal surface, on which the third structure is formed, of the third substrate. The second substrate is removed from the second bonded body. A third bonded body is formed by bonding a fourth principal surface, which is exposed after the first substrate is removed, of the first bonded body to a fifth principal surface, which is exposed after the second substrate is removed, of the second bonded body. The supporting substrate is removed from the third bonded body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.