Semiconductor structure
US12402394B2 · kind B2 · utility
0Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2023 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Oct 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a first fin structure and a second fin structure, a first dielectric layer disposed over the first fin structure, a second dielectric layer disposed over the second fin structure, a first gate electrode disposed over the first dielectric layer, and a second gate electrode disposed over the second dielectric layer. A thickness of the first dielectric layer and a thickness of the second dielectric layer are equal. The second fin structure includes an outer region and an inner region, and a Ge concentration in the outer portion is less than Ge concentration in the inner portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.