Josephson transistor

US12402542B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• UNIVERSITE GRENOBLE ALPES · FR

Inventors

• Fabrice Nemouchi · Moirans, FR
• Frédéric Gustavo · Grenoble, FR
• François LEFLOCH · Grenoble, FR
• Tom Doekle Vethaak · Grenoble, FR

Key dates

• Filing date: Aug 30, 2022
• Grant date: Aug 26, 2025
• Expiry date: Oct 20, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N60/805

Abstract

A Josephson transistor, this transistor comprising a source and a drain each comprising an electric charge reservoir in electrical contact with a semiconductor layer. Each reservoir comprises a lower face and a side face both buried inside the semiconductor layer, The lower face of each reservoir extends mainly in an intermediate plane parallel to the plane of a support, this intermediate plane being located between a lower plane and an upper plane that define the semiconductor layer. The side face of each reservoir extends mainly perpendicular to the plane of the support, this side face facing the corresponding side face of the other reservoir and being separated from this corresponding side face of the other reservoir by a channel located under a gate of this transistor.