Tungsten silicide target member and method for manufacturing same, and method for manufacturing tungsten silicide film
US12404580B2 · kind B2 · utility
0Cited by
7References
15Claims
0Family size
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Key dates
| Filing date | Nov 21, 2018 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Oct 21, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/34
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSi2 phase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSix with X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 μm2 or more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.