Inventor · Ibaraki, JP

Takeo Okabe

31Patents
7h-index
24Co-inventors
69Inventor score

Filing activity: Dec 22, 1993 → Jun 5, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US6759143B2 Tantalum or tungsten target-copper alloy backing plate assembly and production method therefor Emerging Cross-Sectional Technologies 24 Expired
US6858116B2 Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles Electricity 23 Expired
US5415829A Sputtering target Performing Operations; Transporting 20 Expired
US7507304B2 Copper alloy sputtering target and semiconductor element wiring Electricity 16 Expired
US7740721B2 Copper alloy sputtering target process for producing the same and semiconductor element wiring Electricity 11 Expired
US8246764B2 Copper alloy sputtering target and semiconductor element wiring Electricity 9 Active
US6875325B2 Sputtering target producing few particles Chemistry; Metallurgy 7 Expired
US7138040B2 Electrolytic copper plating method, phosphorous copper anode for electrolytic plating method, and semiconductor wafer having low particle adhesion plated with said method and anode Chemistry; Metallurgy 5 Expired
US9090970B2 High-purity copper-manganese-alloy sputtering target Chemistry; Metallurgy 5 Active
US9165750B2 High purity copper—manganese alloy sputtering target Electricity 4 Active
US7374651B2 Electrolytic copper plating method, phosphorus-containing anode for electrolytic copper plating, and semiconductor wafer plated using them and having few particles adhering to it Chemistry; Metallurgy 4 Expired
US7459036B2 Hafnium alloy target and process for producing the same Emerging Cross-Sectional Technologies 3 Expired
US7799188B2 Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode Chemistry; Metallurgy 3 Active
US9472383B2 Copper or copper alloy target/copper alloy backing plate assembly Chemistry; Metallurgy 2 Active
US8062440B2 Hafnium alloy target and process for producing the same Emerging Cross-Sectional Technologies 2 Active
US8241438B2 Hafnium alloy target Emerging Cross-Sectional Technologies 2 Active
US9704695B2 Sputtering target and manufacturing method therefor Electricity 2 Active
US8262816B2 Hafnium alloy target Emerging Cross-Sectional Technologies 2 Active
US7648621B2 Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesion Chemistry; Metallurgy 2 Expired
US7788882B2 Packaging device and packaging method for hollow cathode type sputtering target Performing Operations; Transporting 1 Active
US9812301B2 Tungsten sintered compact sputtering target and method for producing same Chemistry; Metallurgy 1 Active
US9773651B2 High-purity copper sputtering target Chemistry; Metallurgy 1 Active
US9896745B2 Copper alloy sputtering target and method for manufacturing the target Electricity 1 Active
US7943033B2 Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode Chemistry; Metallurgy 1 Active
US12404580B2 Tungsten silicide target member and method for manufacturing same, and method for manufacturing tungsten silicide film Chemistry; Metallurgy 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.